Monolayer materials made of certain metals and elements have attracted attention as promising building blocks for the future of electronics and light-based devices. These materials are only one atom thick and have unique energy properties that can be adjusted. One such material, called tungsten diselenide, is especially interesting because it can emit light very effectively—if its internal energy structure is in the right state. But its ability to emit light depends heavily on temperature. That’s why understanding how temperature affects this material’s energy behavior is important for developing reliable and efficient devices.
Dr. Annie Zhang from Stevens Institute of Technology explored how temperature changes affect tungsten diselenide’s ability to emit light. Their study, published in the journal Micromachines, examined the shift between two types of internal energy structures known as the “direct” and “indirect” energy gaps. An energy gap, often called a band gap, is the range in a material where no electron states exist, and it plays a key role in determining how well the material can conduct electricity or emit light. In a direct band gap, the material can release light more efficiently, while in an indirect band gap, the process is slower and less effective. These properties are critical for things like LEDs and lasers. To understand this behavior, the researchers combined hands-on lab testing with advanced computer simulations based on quantum physics, which is the science that explains how very small particles like electrons behave.
Through careful testing of how tungsten diselenide emits light across a wide range of temperatures, they found that the material’s light-emitting behavior is not fixed. At colder temperatures, the light emitted had a higher energy and was more defined, suggesting the material had an energy structure that made it harder to emit light efficiently. As the temperature increased, the light shifted in a way that showed the material was becoming more efficient at light emission. This efficient state reached its best point around room temperature. But as the material got hotter, it started to lose this ability, and the light faded away.
This shift in behavior shows how sensitive tungsten diselenide is to temperature. “Our study suggests that monolayer tungsten diselenide is at the transition boundary between the indirect and direct band gap at room temperature,” Dr. Zhang explained. In simpler terms, at room temperature, the material is sitting right at the edge between two energy states—one that allows strong light emission and one that does not. This means that even small temperature changes could tip it one way or the other, making it crucial to understand this balance when designing future devices.
To back up their experimental results, the researchers also used computer models to simulate how the material’s atomic structure changes with temperature. These models are based on a method known as density functional theory, which is a way to calculate how electrons are arranged and how they interact with atoms in a material. As the material heats up, its atomic spacing expands, and this affects the way energy flows inside it. These simulations matched what they saw in the lab: when the material was colder, the energy flow was less ideal for light emission. As it expanded with heat, it entered a more efficient state, then shifted back again at higher temperatures. What’s important is that the key transition occurred around everyday room conditions, reinforcing how relevant this discovery is for practical use.
This finding is especially important for designers of light-based technologies. Tungsten diselenide’s ability to emit light efficiently at room temperature makes it a good candidate for products like light-emitting diodes, lasers, and sensors. Light-emitting diodes, or LEDs, are devices that produce light when electricity passes through them. However, since tungsten diselenide sits so close to the tipping point between its two energy states, temperature fluctuations in the real world could affect its performance. “Band gap is tunable by temperature,” Dr. Zhang said—meaning engineers can potentially control the material’s properties just by adjusting temperature, which opens the door to new kinds of smart, temperature-sensitive electronics.
The study also looked closely at how the material expands with heat. They discovered that tungsten diselenide in its thin, single-layer form expands more than twice as much as it does in its thicker, multi-layered form. Bulk form refers to the material when it’s in a structure made of many layers, more like what you’d find naturally or in larger crystals. This agrees with earlier findings for other one-layer materials like graphene, which is a single layer of carbon atoms known for its strength and electrical properties. The observation confirms that extremely thin materials behave differently and need their own design strategies, especially when they’re being used in products that experience temperature changes.
One of the tools the researchers used was light emission testing, also called photoluminescence. This process involves shining a light on the material and measuring the light that comes back out. It not only helps observe how the material behaves but also gives insight into how much it expands with heat. They noted that this method offers a simple way to study the thermal behavior of these thin materials by linking the light they emit to changes in their internal energy. Dr. Zhang also pointed out that their high-quality samples, which had very few flaws, allowed them to get clear and reliable results—something that’s essential when trying to match lab findings with computer models.
In summary, the research by Dr. Zhang improves our understanding of how tungsten diselenide responds to temperature. Their combination of hands-on lab work and simulation-based analysis shows just how finely tuned this material is—and how even small temperature shifts can change the way it performs. As this material finds its way into new flexible, ultra-thin, and smart electronic devices, this study provides a solid foundation for making those devices more efficient and reliable.
Journal Reference
Wang Y., Zhang X. “Experimental and Theoretical Investigations of Direct and Indirect Band Gaps of WSe₂.” Micromachines, 2024; 15(6):761. DOI: https://doi.org/10.3390/mi15060761
About the Author

Prof. Xian (Annie) Zhang is an Assistant Professor at Department of Mechanical Engineering, Stevens Institute of Technology. Prior to that Dr. Zhang obtained her Ph.D. in Mechanical Engineering from Columbia University, followed by a fellow researcher position at Columbia University/Cornell University. Her research focuses on Thermal Science, Quantum Devices, Advanced Manufacturing, Low-Dimensional Materials, Artificial Intelligence. Her work has been published in top journals such as Nature, Small, etc. Her work has been recognized as Cover Article, Editor’s Pick, Featured Article. She is the recipient of NSF Faculty Early Career Development (CAREER) Award and NSF Launching Early-Career Academic Pathways in the Mathematical and Physical Sciences (LEAPS-MPS) Award.